Semiconductor dynamics evaluation system (TRANSISTOR, MOS-FET, IGBT, DIODE) SWRL 1510 ZZ
CATS
It has application performance of 1 ms at 1500 V, 1000 A, and it has sufficient power as a dynamic characteristic test of power device. The measuring part takes into consideration the structure which can measure the device in the cooling or high temperature state, it enables connection with the external chamber and makes it possible to evaluate the device by the temperature characteristic.
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